ANALYTICAL STUDY OF STRAINED SOI MOSFET
نویسندگان
چکیده
منابع مشابه
A unified analytical SOI MOSFET model for fully- and partially-depleted SOI devices
We present a new unified analytical front surface potential model. It is valid in all regions of operation (from the sub-threshold to the strong inversion) and an analytical expression for the critical voltage Vc delineating the partially depleted (PD) and the fully depleted (FD) region is introduced. The drift/diffusion equation is used to derive a single formula for the drain current valid in...
متن کاملImpact of SOI thickness on device performance and gate oxide reliability of Ni fully silicide metal-gate strained SOI MOSFET
This study investigates the effects of oxide traps induced by SOI of various thicknesses (TSOI = 50, 70 and 90 nm) on the device performance and gate oxide TDDB reliability of Ni fully silicide metal-gate strained SOI MOSFETs capped with different stressed SiN contact-etch-stop-layer (CESL). The effects of different stress CESLs on the gate leakage currents of the SOI MOSFET devices are also in...
متن کاملCompact Modeled SOI MOSFET Circuits
SOI means Silicon on Insulator. This type of transistors has Silicon-Insulator-Silicon substrate which is different from conventional MOSFET structure where metal layer is used on the top of Insulator [1, . Now a days, the width of the oxide of a MOSFET is reduced from 300nm to 1.2nm and even less with scaling in technology. If it is further reduced, the leakage problems (majorly Sub-threshold ...
متن کاملComprehensive Simulation Study of Statistical Variability in 32nm SOI MOSFET
1. Abstract We have studied the statistical variability (SV) in thinbody silicon-on-insulator (TBSOI) MOSFETs with high-κ/metal gate stacks. We have considered the impact of the gate workfunction variation (WFV) in conjunction with random discrete dopants (RDD) and trapped interface charges. The simulations were carried with the Glasgow 3D ’atomistic’ simulator GARAND. Results for both threshol...
متن کاملBE SOI MOSFET: A very simple reconfigurable SOI transistor
A reconfigurable transistor that can act both as a ntype and as a p-type MOSFET presents a flexibility of operation that may enable better circuit design [1]. Many options use sophisticated fabrication processes and architectures such as nanowires [2,3,4] to obtain a reconfigurable transistor. There are papers that report simulation results [5,6] for this kind of device. In this work we introdu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Research in Engineering and Technology
سال: 2016
ISSN: 2321-7308,2319-1163
DOI: 10.15623/ijret.2016.0512009